lattice mismatch造句
例句與造句
- Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半導(dǎo)體外延層晶格失配度的計算 - The different definitions of lattice mismatch are compared with each other
摘要比較了晶格失配度的各種定義，建議統(tǒng)一使用同一定義。 - The effect of lattice mismatch on the nucleation process of heteroepitaxial growth of ultrathin film
晶格失配對異質(zhì)外延超薄膜生長中成核特性的影響 - The successful preparation of zncdse qd on znse provides a way for the fabrication of qd in s - k mode with relative small lattice mismatch
該方法為較小失配下s - k模式量子點的制備提供了途徑。 - However , the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length
而對于具有4 %晶格失配的超晶格模擬結(jié)果卻表明，超晶格導(dǎo)熱系數(shù)隨周期長度的增大而單調(diào)上升。 - It's difficult to find lattice mismatch in a sentence. 用lattice mismatch造句挺難的
- These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies
這一研究結(jié)果表明，材料的晶格失配是大多數(shù)實驗研究中沒有發(fā)現(xiàn)超晶格最小導(dǎo)熱系數(shù)的主要原因。 - This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy , which has the capability for improving device structure and characteristics
這種技術(shù)解決了外延生長難以解決的晶格失配問題，為改善器件結(jié)構(gòu)及性能提供了巨大的潛力。 - The calculation way of the lattice mismatch through a new simpilied model between semiconductor epitaxy and substrate are analysed , and the way of determine the lattice mismatch in xrd are also discussed
結(jié)果表明，正三角形晶格和長方形晶格匹配，長方形晶格的寬列原子的匹配具有優(yōu)先性，不受長列原子匹配的影響。 - The xrd results show that the sputtered lcmo film grains are grown epitaxially , when the lattice mismatch between film and substrate is small . the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究結(jié)果表明,當基片與lcmo薄膜間的晶格失配度較小時,薄膜和基片具有一致的晶格取向,薄膜具有較好的外延結(jié)構(gòu)特征。 - And , the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且，隨著膜厚的增加，處于底層的膜層起到緩沖層的作用，逐漸改善著薄膜與襯底之間的晶格失配，從而使得sbn薄膜在( 001 )方向的優(yōu)先取向性越來越好。 - Due to the lattice mismatch and thermal mismatch between the thin film and the substrate and the process from high temperature to low temperature during the preparation of the thin films , residual stress will be inevitably induced between the thin film and the substrate
然而鐵電薄膜在制備過程中會經(jīng)歷一個由高溫到低溫的過程,薄膜與基片之間存在著晶格失配、熱失配等,薄膜中必然存在一定的殘余應(yīng)力。 - The anisotropy of four - fold symmetry indicates the appearance of cubic anisotropy . ( 4 ) the in - plane unixial anisotropy existed in films originates probably from magneto - elastic interaction due to the anisotropic strain caused by lattice mismatch at the interface
( 3 )薄膜中存在的面內(nèi)單軸各向異性可能來源于磁彈性相互作用，這是由于薄膜在生長過程中，與襯底的品格錯配而產(chǎn)生的應(yīng)力各向異性導(dǎo)致的。 - On the other hand , if the introduction of the residual stress is fully understood , one can make good use of the strain induced by the lattice mismatch between the film and the substrate to modulate and improve the properties of the ferroelectric thin films
另一方面,如果人們能夠?qū)Ρ∧?yīng)力的產(chǎn)生機制有較深刻全面的理解,就可能通過適當?shù)闹苽涫侄蝸砝帽∧づc基片間的應(yīng)變效應(yīng)來調(diào)制和提高薄膜的性能。 - After a detailed investigation on the p - fesi2 / si orientation relationships by cem , we point out that the existence of several competing and incoherent rientation relationships , twining , and lattice mismatch are responsible for the ifficulty in obtaining high - quality p - fesi2 films
因此復(fù)雜的取向關(guān)系是p干。薄膜質(zhì)量差的本質(zhì)原因之一。為了更深入地了解p干st取向關(guān)系，本文利用晶界取向理論對其進行了計算，結(jié)果表明卜fest 。 - The investigation of structure by x - ray diffraction shows that crystal parameters changes clearly when percenting ca and la into pbtio _ 3 , it was caused by the ca ion and la ion replaced the pb ion of a position in perovskite compound , that bring lattice mismatch and asymmetrical replace
在pbtio _ 3中摻入la和ca可以有效改變薄膜的晶格常數(shù),這是因為在abo _ 3型化合物中,鈣離子、鑭離子取代了a位的鉛離子,造成晶格失配和不對稱取代。
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